Application

Webinar: Graphene-Based Nanomaterials for Versatile Biosensors

General description

Graphene filmGrowth Method: CVD synthesisTransfer Method: Clean transfer methodQuality Control: Optical Microscopy & Raman checkedSize: 1 cm x 1 cmAppearance (Color): TransparentTransparency: >97%Appearance (Form): FilmCoverage: >95%Number of graphene layers: 1Thickness (theoretical): 0.345 nmFET Electron Mobility on Al2O3: 2; 000 cm2/V·sFET Electron Mobility on SiO2/Si (expected): 4; 000 cm2/V·sSheet Resistance: 600 Ohms/sq.Grain size: Up to 10 µmSubstrateSize: 1.25 cm x 1.25 cmType/Dopant: P/BOrientation: 100Growth Method: CZResistivity: 1-30 ohmcmThickness: 525 +/- 25µmFront Surface: polishedBack Surface: etchedCoating: 300 nm thermal oxide on both wafer sides

Graphene is a unique one atom thick, two dimensional allotrope of carbon. Among all the synthesis technique, chemical vapor deposition of graphene on various substrates is the most promising route for the large scale production of good quality graphene. Graphene deposited on dielectric surface may exhibit better performance in graphene based FETs. Graphene deposited on SiO₂/Si may be deposited by direct chemical vapor deposition via a sacrificial copper film.

Sheet resistance measurements were performed in a vacuum chamber to ensure their reproducibility, within a four-point configuration (van der Pauw geometry, silver paint contact) with injection of currents above 10uA